Silicon Materials Workshop
4th Silicon Materials Workshop and
11th International Workshop on Crystalline Silicon for Solar Cells
April 20th – 22nd 2022 In Lisbon, Portugal
Physical event of the CSSC and SiMat workshop
Dear colleagues,
It is with great pleasure that we announce the new date for the physical event of the joined SiMat and CSSC workshop.
A remarkable feature of the CSSC and SiMat workshop are the direct interaction and discussion among the participants.
We are looking forward to see you in Lisbon in 2022
Joao Serra and Gianluca Coletti.
Scope
This year and for the second time, we offer the participants of the SiMat and CSSC workshops a joint and unique virtual event hosted by the University of Lisbon in Portugal, (April 20-22, 2022). The CSSC workshop focuses on the silicon material and the substrate with strong attention on crystallization. The SiMat workshop focuses on the connection between silicon materials and cell and module technologies. Combining the two workshops will create a fantastic opportunity to exchange knowledge and insights between industrial and scientific participants from the two communities. The program will include invited and contributed oral and poster presentations in addition to open forum discussions on selected topics.
Welcome to a unique silicon for photovoltaics event.
Topics covered at the workshop are:
• Fundamental materials science related to crystalline silicon solar cells
• Silicon feedstock technologies
• Crystallization of multicrystalline, quasi-mono, monocrystalline silicon
• Advanced wire sawing and emerging kerfless technologies
• Novel materials and processing for advanced cell architecture
• Impact of silicon material to performance of cell, module and PV system
• Degradation phenomena related to silicon materials on cell and module performance (e.g. LID, LeTID, PID, hotspot, etc.)
In the past, CSSC was held in Sendai, Japan (2006), Xiamen, China (2007), Trondheim, Norway (2009), Taipei, Taiwan (2010), Boston, USA (2011), Aix-les-Bains, France (2012), Fukuoka, Japan (2013), Bamberg, Germany (2015), Tempe, USA (2016) and Sendai (2018).
The SiMat was held in Amsterdam, the Netherlands (2008), Rome, Italy (2013), Tempe, USA (2016).
Program - CSSC-1 & 4th SiMat joint workshop
11h00m | Registration | |
11h40m | Opening | |
12h00m | Detection of H in p-type silicon materials using FR-IR spectroscopy | |
Erik Marstein | ||
IFE, Norway | ||
12h40m | Growth of silicon single crystals with a diameter of 4 inch using the granulate crucible method | |
R. Menzel, K. Dadzis, A. Nikiforova, N. Lorenz-Meyer, B. Faraji-Tajrishi, N. Abrosimov, H. Riemann | ||
Leibniz-Institut für Kristallzüchtung | ||
13h00m-14h00m | Lunch | |
Novel monocrystalline materials | ||
14h00m | Oxygen, carbon and other interesting components of the first single crystal silicon ribbons pulled horizontally from a melt | |
Nathan Stoddard, Jesse Appel, Alireza Pirnia, Cecilia Lee, Peter Kellerman and Parthiv Daggolu | ||
Leading Edge Equipment Technologies | ||
14h40m | Twin formation in high-velocity Czochralski growth of photovoltaic silicon | |
Xiang Lu, Shuai Yuan*, Xuegong Yu, Deren Yang | ||
Zhejiang University, Hangzhou, China | ||
15h00m | Dislocation activation conditions and dynamics studied in situ by X-ray diffraction imaging in monocrystalline Si near the melting point | |
Serge Neves Dias, Maike Becker, Hadjer Ouaddah, Isabelle Périchaud, Guillaume Reinhart, Nathalie Mangelinck-Noël, Gabrielle Regula* | ||
Aix Marseille Univ, Université de Toulon, Marseille, France | ||
15h20m | Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals | |
F.Sturm 1*, M. Trempa 1, G. Schuster 2, R. Hegermann 2, P. Götz 2, R. Wagner 3, G. Barroso 3, P. Meisner4, C. Reimann 1, J. Friedrich 1 | ||
1 Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany | ||
2 CVT GmbH & Co. KG, Romantische Strasse 18, 87642 Halblech, Germany | ||
3 Rauschert Heinersdorf-Pressig GmbH, Bahnhofstrasse 1, 96332 Pressig, Germany | ||
4 SGL Carbon GmbH, Drachenburgstrasse, 53170 Bonn, Germany | ||
15h40m-16h00m | Cofffee break | |
Defects in silicon | ||
16h00m | Kinetics of Light-Induced Instability in Bifacial N-Type Silicon Heterojunctions | |
Brendan Wright | ||
UNSW (Aus) | ||
16h20m | Characterisation of Striations in n-type Silicon Wafer Processed with Polysilicon Contacts | |
Zhuangyi Zhou 1*, Fiacre Rougieux 1, Manjula Siriwardhana 2, Daniel MacDonald 2, Gianluca Coletti 1,3 | ||
1 School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Australia | ||
2 College of Engineering and Computer Science, Australian National University, Australia | ||
3 TNO Energy Transition, Westerduinweg 3, 1755 LE Petten, the Netherlands | ||
16h40m | A Study on Degradation Mechanisms in the Czochralski Grown Si Crystal for Solar Cell Applications | |
Rasit Turan 1,2, Sercan Aslan 1,2, Mehmet Konyar 4, Nurhayat Yıldırım 4, Bulent Arıkan 1, Gence Bektaş 1,3, Hasan Hüseyin Canar 1,3, Salar Habibpur Sedani 1,3, Fırat Es 4, | ||
1 Middle East Technical University- Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, Turkey | ||
2 Department of Physics, Middle East Technical University (METU), Ankara, Turkey | ||
3Micro and Nanotechnology Program (MNT), Middle East Technical University (METU), Ankara, Turkey | ||
4 Kalyon PV Research and Development Center, Kalyon Güneş Teknolojileri Üretim A.Ş., 06909, Ankara, Turkey | ||
17h00m | Copper in compensated p-type and n-type Czochralski silicon: diffusivity, influence on the majority carrier density and mobility | |
Guilherme Gaspar 1, Chiara Modanese 1, Sarah Bernardis 2, Nicolas Enjalbert 2, Lars Arnberg 1, Sebastien Dubois 2, Marisa Di Sabatino 1* | ||
1 Norwegian University of Science and Technology (NTNU), Department of Materials Science and Engineering, Trondheim, Norway | ||
2 Univ. Grenoble Alpes, (CEA), LITEN, Department for Solar Energy, National Institute of Solar Energy, France |
Directional solidfication, UMG and characterisation | ||
8h30m | Decomposition of small-angle grain boundaries during directional solidification of multicrystalline silicon | |
Lu-Chung Chuang*, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara | ||
Tohoku University, Japan | ||
9h00m | Towards Low-cost High-efficiency and Reliable Upgraded Metallurgical Silicon Solar Cells | |
C. del Cañizo 1*, N. Dasilva-Villanueva 1, D. Fuertes Marrón 1, B. Arikan 2, H. H. Canar 2, R. Turan 2,3, G.Sánchez Plaza 4, L. Méndez 5, E. Forniés 5 | ||
1 Instituto de Energía Solar – Universidad Politécnica de Madrid, Avda. Complutense, 30, Madrid, Spain | ||
2 Center for Solar Energy Research and Applications (GÜNAM), Ankara, Turkey | ||
3 Department of Physics, Middle East Technical University, Ankara, Turkey | ||
4 Nanotechnology Center – Universidad Politécnica de Valencia, Camino de Vera, Valencia, Spain | ||
*email: carlos.canizo@upm.es | ||
5 Aurinka PV Group, Marie Curie 19, Rivas-Vaciamadrid (Madrid), Spain | ||
9h20m | Adjustment of resistivity for phosphorus doped n-type multicrystalline silicon | |
Iryna Buchovska*, Kaspars Dadzis, Natasha Dropka, Frank M. Kiessling | ||
Leibniz-Institut für Kristallzüchtung (IKZ) | ||
9h40m | Growth rate-temperature gradient diagrams for control of grain structure in PV ingots | |
Thierry Duffar 1,2* | ||
1 Univ. Grenoble Alpes, CNRS, Grenoble INP*, SIMAP, F-38000 Grenoble, France | ||
* Institute of Engineering Univ. Grenoble Alpes | ||
2 Visiting Professor, Institute for Materials Research, Tohoku University, Sendai, Japan | ||
10h00m | Microscopic Charge Carrier Lifetime Mapping for Silicon Material Analysis | |
Friedemann D. Heinz 1,2*, Maximilian Özkent 2, Clara Rittmann 2, Florian Schindler 2, Martin C. Schubert 2, Wolfram Kwapil 1,2, Stefan Glunz 1,2 | ||
1 Laboratory for Photovoltaic Energy Conversion, Department for Sustainable Systems Engineering | ||
(INATECH), University Freiburg, Germany | ||
2 Fraunhofer Institute for Solar Energy Systems (ISE),Freiburg, Germany | ||
10h20m-11h40m | Coffee break +Poster session | |
11h40-13h00m | Panel discussionModerator: Gianluca Coletti, TNO, UNSW Speaker: Markus Fischer, Co-Chair, ITRPV Steering Committee Panel: João M. Serra, Faculdade de Ciências Universidade de Lisboa Nathan Stoddard, Leading Edge Equipment Technologies Peter Dold, Fraunhofer CSP Nurhayat Yıldırım, Kalyon PV Carlos del Cañizo, Instituto de Energía Solar – Universidad Politécnica de Madrid | |
14h00m | Afternoon tour and dinner |
Impact of material properties on cell performance I | ||
8h20m | Auger parametrization for silicon PV | |
Tim Niewelt | ||
Fraunhofer ISE | ||
Warwick University, UK | ||
9h00m | PERC-cells from 100% recycling-silicon from end-of-life PV-modules | |
P. Dold 1, A. Obst 1, P. Henatsch 1, F. Zobel 1, S. Riepe 2, D. Wagenmann 2, E. Lohmüller 2, S. Lohmüller 2 | ||
1 Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Saale), Germany | ||
2 Fraunhofer Institute for Solar Energy Systems ISE, Germany | ||
9h20m | Developing advanced light-trapping structures for back-contact crystalline silicon solar cells by metal-assisted chemical etching | |
David M. Pera, Ivo Costa, Filipe Serra, Gaspar Gaspar, Killian Lobato, João M. Serra, José A. Silva* | ||
Instituto Dom Luiz – Faculdade de Ciências Universidade de Lisboa, Portugal | ||
9h40m-10h00m | Coffee break | |
Impact of material properties on cell performance II | ||
10h00 | Bulk and interface defects limiting high-efficiency n-type solar cells | |
Fiacre Rougieux | ||
School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, Australia | ||
10h40m | Gettering by polysilicon/oxide passivating contact structures | |
AnYao Liu*, Zhongshu Yang, Jan Krügener, Frank Feldman, Jana-Isabelle Polzin, BerndSteinhauser, Sieu Pheng Phang, Daniel Macdonald | ||
ANU, Australia | ||
11h00m | Alternative Cz Ingot squaring and cell cutting methodology for low temperature PV cell | |
Mickael Albaric , S. Harrison, B. Martel, F.Dhainaut, T.Desrues | ||
CEA, LITEN, Department of Solar Technologies, France | ||
11h20m | Closing |
1 | Rapid Characterization of Surface Damage Region using μ-PCD technique | |
Ferenc Korsós1*, Krisztián Dávid1,2, András Bojtor1,2, Xueqian Dong3, Hao Deng4, Shasha Wang4, Chao Du4, Xiaobo Chen4 | ||
1 Semilab Co., Ltd., 4/A. Prielle K. str., Budapest, Hungary | ||
2 Budapest University of Technology and Economics, Budapest, Hungary | ||
3 Semilab Trade Shanghai Co., Ltd., Pudong, Shanghai (201210), P.R.China | ||
4 LONGi Green Energy Technology Co., Ltd., Xi’an, Shaanxi (710100), P.R China | ||
2 | Effect of Germanium Doping in Cast-Mono Silicon Ingots | |
Aravind Subramanian1,2, Patricia Krenckel1*, Stephan Riepe1 | ||
1 Fraunhofer ISE, Heidenhofstrasse 2, Freiburg, Germany | ||
2 Albert-Ludwigs-Universität Freiburg, Hermann-Herder-Straße 5A, Freiburg, Germany | ||
3 | An attempt to correlate dislocation structures and distribution to macroscale lattice rotations in <100> cast-mono ingots | |
Etienne Pihan1, Mickael Albaric1, Nathalie Mangelinck-Noël2 | ||
1Univ Grenoble Alpes, CEA-LITEN, DTS, LMPS, INES, F-73375 Le Bourget-du-Lac, France | ||
2Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, 13397, Marseille, France | ||
4 | Deformation of the crystalline structure in silicon due to carbon contamination and effect on solidification | |
H. Ouaddah1, I. Périchaud1, G. Regula1, G. Reinhart1, F. Guittonneau2, L. Barrallier2, T-N. Tran3, J. Baruchel3, N. Mangelinck Noël1* | ||
1Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, 13397 Marseille, France | ||
2Arts et Métiers Institut de Technologie, HESEAM 2, Cours des Arts et Métiers, 13617, Aix-en-Provence France | ||
3 ESRF—The European Synchrotron, CS40220, 38043 Grenoble CEDEX 9, France | ||
5 | Temperature-Dependent Lifetime Measurements Using MW-PS in Contaminated Silicon | |
Sarra Dehili, Cyril Leon, Damien Barakel, Olivier Palais* | ||
Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, 13397 Marseille, France | ||
6 | Imaging of stress fields and bulk defects in monocrystalline silicon ingots | |
Tamas Brigancz1*, Zsombor Sánta1, Árpád Gyurita1, István Soczó1, Zoltán Kiss1, Ferenc Korsós1 | ||
1 Semilab Co. Ltd., 4/A. Prielle K. str., Budapest, Hungary | ||
7 | Oxygen diffusivity enhancement due to hydrogen- and light-soaking of silicon: A first principles modelling study | |
Vítor José Babau Torres*, Paulo David Rodrigues Santos, José Pedro de Abreu Coutinho | ||
Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal | ||
8 | Formation mechanism of H2 molecules in Si quenched from high temperatures (and its role in LeTID of solar silicon) | |
Diana Gomes1*, Vladimir P. Markevich2, Anthony R. Peaker2, José Coutinho1 | ||
1 I3N, Department of Physics, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal | ||
2 Photon Science Institute and Department of Electrical and Electronic Engineering, The University of | ||
Manchester, Manchester M13 9PL, United Kingdom | ||
9 | Subgrain boundary evolution and interaction with twin boundaries in a directionally solidified thin cast-mono sample | |
Maike Becker1, Etienne Pihan2, Fabrice Guittonneau3, Gabrielle Regula1, Hadjer Ouaddah1, Guillaume Reinhart1, Laurent Barrallier3, Nathalie Mangelinck-Noël1* | ||
1 Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, 13397, Marseille, France | ||
2 Univ. Grenoble Alpes, INES, CEA, LITEN, Department of Solar Technologies, F-73375 Le Bourget du Lac, France | ||
3 Arts et Métiers, Institute of Technology, HÉSAM Université, 2, Cours des Arts et Métiers, 13617, Aix-en-Provence, Cedex 1, France | ||
10 | Identification of Thermal Donor-rich Czochralski wafers using hyperspectral photoluminescence imaging in both n- and p-type materials | |
T. Mehl1*, E. Olsen1, I. Burud1, J. Veirman2, M. Albaric2, W. Favre2 | ||
1 Norwegian University of Life Sciences (NMBU), Universitetstunet 3, NO-1433 Ås, Norway | ||
2 CEA, LITEN, Department of Solar Technologies, F-73375 Le Bourget du Lac, France | ||
11 | Numerical simulation analysis of the Silicon on Dust Substrate process | |
Filipe Serra, José A. Silva, João M. Serra | ||
Instituto Dom Luiz – Faculdade de Ciências Universidade de Lisboa,Campo Grande Ed. C8, 1749-016 Lisboa, Portugal | ||
12 | Optical performance simulation of crystalline silicon substrates randomly textured by metal-assisted chemical etching | |
David M. Pera, Ivo Costa, Filipe Serra, Guilherme Gaspar, Killian Lobato, João M. Serra, José A. Silva* | ||
Instituto Dom Luiz – Faculdade de Ciências Universidade de Lisboa, Campo Grande Ed. C8, 1749-016 Lisboa, Portugal | ||
13 | New cold crucible for silicon single crystal | |
K. Zaidat1,*, H. Abouchi2, S. Al-Radi1,2, X. Han1, Fl. Baltaretu3, M. Al-Radi1,2, C. Garnier2, G. Hasan2, R. Ernst2, and A. Kharicha4 | ||
1 Univ. Grenoble Alpes, SIMAP, F-38000 Grenoble, France | ||
2 CNRS, SIMAP, F-38000 Grenoble, France | ||
3 Technical University of Civil Engineering Bucharest, Romania | ||
4 Christian-Doppler Laboratory for Metallurgical Applications of Magnetohydrodnamics, Leobben, Austria | ||
14 | Controlling silicon laser melting and phosphorus doping at the nanoscale – towards scalable tunnel junctions for tandem solar cells | |
K. Lobato, F. Serra. G. Gaspar and JM Serra | ||
Instituto Dom Luiz – Faculdade de Ciências Universidade de Lisboa,Campo Grande Ed. C8, 1749-016 Lisboa, Portugal |
Sponsors
Organisers
Venue
The joint SiMaterials and CSSC workshops are hosted by the Faculty of Sciences of the University of Lisbon. the joint workshop will be held at the:
Faculty of Sciences of the University of Lisbon (FCUL)
Campo Grande 016, 1749-016 Lisboa, Portugal
Committees
Local organiser joint event SiMat and CSSC
- João Serra, FCUL, Portugal – Chair
- Gianluca Coletti, TNO Energy Transition, the Nederlands and UNSW, Australia – Co-Chair
- José Silva, FCUL, Portugal
- Killian Lobato, FCUL, Portugal
- Guilherme Gaspar, FCUL, Portugal
- Ivo Costa, FCUL, Portugal
- Daniel Vilhena, FCUL, Portugal
Scientific committee
- Gianluca Coletti (TNO, UNSW) – Chair
- Ivan Gordon (imec)
- Anis Jouini (INES)
- Eivind Johannes Ovrelid (Sintef)
- Martin Schubert (Fraunhofer ISE)
- Mariana Bertoni (ASU)
- João Serra (FCUL)
About
Reasons for the Si-Materials workshop
The Si-Materials workshop series target specific issues in the field of crystalline silicon materials for photovoltaic applications. The workshop presentations and discussion sessions rotate around this topic.
The workshop’s main character is to be at the interface between silicon material technologies and cell- and module technologies.
History
The first workshop was organized in Amsterdam, the Netherlands, in 2008. The focus was on solar-grade feedstock specifications. At that time the poly-silicon shortage necessitated the redefinition of solar grade silicon and its specifications. The workshop resulted in a tentative and approximate standard set of specifications for solar grade silicon suitable for the fabrication of solar cells which were taken as basis for the discussion and the formulation of the SEMI standard on polysilicon issued in 2009.
The second workshop was organized in Rome, Italy in 2013 and focused on the challenges for Si materials. The main debates were around mono- and multi-crystalline silicon from the different perspective of wafer, cell and module producers and customers in a market dominated by oversupply of PV modules. The outcome was reported in the editorial of a special edition of Solar Energy Materials and Solar Cells, Volume 130, November 2014, from page 629.
The third workshop was organised in Tempe, Arizona, USA. in 2016. The market situation has changed again. The PV industry was coming out from dark economical and financial situations. It was the time where new technologies were to be implemented to keep and further increase this positive trend. The focus was to discussion and debate over new technologies available and in R&D phase for the PV industry. In this market situation, an often mentioned topic was and still is the ongoing debate between p- and n-type silicon together with silicon defect mitigation processes. These topics was the core of the Si-Materials workshop 3rd edition.